Manufacture of semiconductor element

Abstract

Abstract PURPOSE:To form thick nitride even in the bottom part of a contact hole, and improve barrier properties, by a method wherein firstly thin Ti, Zr films are deposited and nitriding is performed, and then films of Ti, Zr, etc., are again deposited and nitriding is performed. CONSTITUTION:A CVD insulating film 2 is deposited on a semiconductor substrate 1. A contact hole 3 for connecting a substratum with an upper layer wiring is opened in the insulating film 2. A Ti film is deposited on the whole surface. The deposited Ti film is subjected to lamp annealing in N2, thereby forming a TiN film 24 on the insulating film 24 and forming thin TiN and thin TiSi2 25 in the bottom part of the contact hole 3. A Ti film 26 is again deposited by sputtering method, and completely turned into TiN by lamp annealing in N2 gas. Al alloy 27 is deposited on the upper whole surface of a formed structure, and a wiring is formed. Thereby nitride having high barrier properties can be formed.

Inventors

• 👤 Makiko Kageyama
• 👤 影山　麻樹子
• 👤 Hiroshi Tetsuda
• 👤 鉄田　博

Bibliographic Details