Method for cleaning plasma cvd device

Abstract

Abstract PURPOSE:To rapidly clean the plasma CVD device without generating AlF3 at the time of cleaning the reaction furnace of the device with a glow discharge by specifying the frequency of a high-frequency power source and the mixing ratio of CF4 to O2. CONSTITUTION:The supply of a gaseous reactant is stopped after a specified number of wafers 6 are treated by plasma CVD, then CF4 and O2 are introduced from inlets 31 and 32 in the mixing ratio CF4(CF4+O2)=(0.6 to 0.9) and mixed in the nozzle part 30, and the mixture is injected from a shower electrode 40. A high-frequency voltage at 13.56 MHz frequency is impressed from a high-frequency power source 7 in this gaseous mixture atmosphere to generate a glow discharge, hence the reaction product deposited on the inner wall of a reaction furnace 10 and on the electrode 40, etc., is etched and removed, and the device is cleaned. The feed power of the power source 7 is preferably controlled to about 400-600 W, and the pressure of the gaseous mixture in the furnace 10 to about 3.0-8.0 Torr.

Inventors

• 👤 Katsumi Oyama
• 👤 勝美 大山

Bibliographic Details