Ion sputtering device and method

Abstract

Abstract PURPOSE:To improve the efficiency of sputtering by providing a power source for forming a glow discharge which can independently control the impressed voltage for each of plural target metals. CONSTITUTION:The thin film consisting of the mixture composed of the plural target metals 11, 12 is formed on the surface of a sample 5 by the glow discharge between the plural target metals 11, 12 and single sample 5, such as semiconductor wafer, in a vacuum chamber 20. The power source 61 for forming the glow discharge is, thereupon, so provided that the impressed voltage for each of the plural target metals 11, 12 can be controlled independently from each other. The compsn. ratios of the formed thin film are varied in the thickness direction in this way and the thin films varying in the compsn. ratios are freely laminated.

Inventors

• 👤 Koichi Miyazawa
• 👤 宏一 宮澤

Bibliographic Details