Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a fine gate pattern in high yield by a method wherein, after the formation of the first source electrode and the first drain electrode at long electrode distance, a gate pattern and a gate electrode are formed furthermore the second source electrode and the second drain electrode at short electrode distance are formed so as to lower the source resistance. CONSTITUTION:A semiconductor substrate 1 is immersed in a mixed aqueous solution of hydrochloric acid and hydrogen peroxide while the parts of exposed n<+> GaAs layer 4 and an n<+> Al GaAs layer 3 are etched away until the current running between a source electrode 8 and a drain electrode 9 reaches a specific value to evaporate aluminum 2000Angstrom thick and then a gate electrode 16 is formed using the lift-off process. Next, respective patterns of the second source electrode 6 and the second drain electrode 7 at the electrode distance dl of 2 mum are formed using a photoresist while ohmic metals of Au-Ge/Ni as the drain 7 and the source 6 are formed by liftoff process and then heat-treated at 400 deg.C for one minute in the hydrogen stream to be brought into ohmic contact.

Inventors

• 👤 Nobuyuki Matsumoto
• 👤 信之 松本

Bibliographic Details