Surface emission semiconductor laser element

Abstract

Abstract PURPOSE:To form semiconductor multilayered reflecting mirrors having refractive index distributions resemble to sine waveform, etc., and high reflectivity with excellent controllability by periodically changing the number of layers of a super lattice structure composed of AlAs layers and GaAs layers. CONSTITUTION:Angular layers 11-29 of semiconductor multilayered reflecting mirrors 31 and 32 are formed by successively changing the numbers (m) and (n) of (AlAs)m(GaAs)n layers under a condition of m+n=20 and the super lattice structure to the same (m) and (n) is successively repeated by two times. In other words, the layer 20 (m=20,n=0) is reached by increasing the (M) by two and decreasing the (n) by two from the layer 11 (m=2, n=13) and the layer 29 (m=2, n=18) is again reached by reducing the (m) by two and increas ing the (n) by two. Therefore, the refractive indexes of the mirrors 31 and 32 vary between 3.6 of Al0.1Ga0.9As and 2.9 of AlAs. When an active layer 4 is made of p-type Al0.15Ga0.85AS, the thickness from the layer 11 to the layer 29 is set at lambda/2 against the light emitting wavelength lambda. Periodic refractive index variation is obtained by repeating such layer structure unit.

Inventors

• 👤 Shoji Kitamura
• 👤 祥司 北村

Bibliographic Details