Resist material and pattern forming method

Abstract

Abstract PURPOSE:To obtain the resist for an upper layer having an excellent sensitivity and definition and excellent resistance to oxygen plasma etching by adding an azide compd. to a specific copolymer. CONSTITUTION:The resist is formed by adding the azide compd. to the copolymer expressed by formula I. This resist is applied on the lower layer resist and is crosslinked by heating; thereafter, the resists are subjected to exposing and developing. In the formula I, R1 denotes CH3, CF3, CN, CH2OH group, etc.; R2 denotes a hydrocarbon group contg. Si; R3 denotes -OH, -O-C(CH3)3, -NH3, etc. Namely, the crosslinking degree is increased by adding the azide compd. to the resist and heating the resist. The upper layer resist which has the excellent sensitivity and definition and the excellent resistance to oxygen plasma etching is obtd. in this way.

Inventors

• 👤 Akiko Kodachi
• 👤 小太刀　明子
• 👤 Satoshi Takechi
• 👤 敏 武智

Bibliographic Details