Manufacture of cmos semiconductor device

Abstract

Abstract PURPOSE:To enable a thin film transistor to be manufactured at a low cost in a manufacturing process using an ion implantation device provided with no mass spectrometer by a method wherein a hollow part is prevented from being induced under a pad through the etching of a base insulating film to have an adversary effect on the after processing of a gate electrode or a wiring. CONSTITUTION:In a thin film transistor manufacturing process, the pads of an N channel transistor section and a P channel transistor section are separately formed. At this point, a thin film serving as a protective film is previously formed on the first-processed pads so as to protect them against etching when the next-processed pads are processed.

Inventors

• 👤 Satoshi Inoue
• 👤 聡 井上

Bibliographic Details