Semiconductor device

Abstract

Abstract PURPOSE:To improve the adhesion between wirings and an insulation film by placing a Cu alloy coverage layer between Cu-based wiring and a protective insulation film. CONSTITUTION:A SiO2 or other insulation film 5 is placed on the active region formed on an Si substrate 4 and after a thin Cu film has been formed by sputter deposition on the surface of insulation film 5, patterning is performed to process a Cu wiring main body 1. Next, a thin Cu-Si alloy film 2a is selectively grown by a CVD process on the exposed surfaces of the Cu wiring main body 1 and after that, a CVD process is again used to form a PSG protective insulation film 6 on the Cu wiring 3a covered with a Cu-Si alloy layer and on the insulation film 5 to complete the semiconductor device. During this, since the Si contained in the Cu-Si alloy coverage layer 2a forms an SiO2 protection layer, no oxidation of the Cu wiring main body 1 occurs. As a result, excellent adhesion can be achieved between the Cu wiring 1 and the protective insulation film 6.

Inventors

• 👤 Takashi Kawanoue
• 👤 川ノ上　孝
• 👤 Masahiko Hasunuma
• 👤 正彦 蓮沼
• 👤 Atsuhito Sawabe
• 👤 厚仁 澤邊
• 👤 Yoshiko Kobanawa
• 👤 小塙　佳子
• 👤 Hisafumi Kaneko
• 👤 尚史 金子
• 👤 Shuichi Komatsu
• 👤 小松　周一

Bibliographic Details