Manufacture of semiconductor device using liquid phase cvd method

Abstract

Abstract PURPOSE:To prevent a corner part of a substrate from being exposed, by providing a dummy layer which has a low wettability for a reactive species of a liquid phase state, and by performing an embedment. CONSTITUTION:On a semiconductor substrate 1, a film is formed using the material to form a dummy layer, and therein, a trench 2 is formed. Thereby, the dummy layer 4, which has a low wettability for a reactive species of a liquid phase state, is provided on the periphery of a opening 21 of the trench 2. Then, the reactive species is embedded into the trench 2, in the liquid phase state, and is defined as an embedded part 3. Thereafter, the dummy layer 4 is removed by etching, and a embedment structure is obtained. In this case, the embedment is formed, somewhat protruding from the top face of the substrate 1, and therefore, the corner part of the substrate 1 can be prevented from being exposed.

Inventors

• 👤 Junichi Sato
• 👤 淳一 佐藤

Bibliographic Details