Compound semiconductor device

Abstract

Abstract PURPOSE:To effectively separate elements electrically from each other by means of earth lines which are small in occupying area by cutting grooves in the surface of a semi-insulating substrate between each element and arranging the earth lines for electrically separating the elements from each other in the grooves in a buried state. CONSTITUTION:In a compound semiconductor device provided with at least two elements 13 on a GaAs semi-insulating substrate 7, grooves 14 are cut in the surface of the substrate 7 between each element 13 and earth lines 12 for electrically separating the elements 13 from each other are arranged in the grooves 14 in a buried state. For example, low-carrier concentration layers 8 are formed at prescribed areas in the upper surface of the substrate 7 by a selective ion implanting method and, after the layers 8 are formed, high carrier concentration layers 9 are formed on both side of the areas 8 by a selective ion implanting method. In addition, after ohmic electrodes 10 which become source and drain electrodes are formed, the grooves 14 are formed between each area proposed to FETs 13. Thereafter, a plurality of FETs 13 are manufactured by forming gate electrodes 11 and, at the same time, the earth lines 12 are formed in the grooves 14.

Inventors

• 👤 Akihiro Yoneda
• 👤 米田　昭弘
• 👤 Koichi Sakamoto
• 👤 孝一 坂本

Bibliographic Details