Plasma treatment

Abstract

Abstract PURPOSE:To effectively prevent reactive product from adhering to the surface of a placing base and to treat a whole material to be treated with uniform characteristics by introducing inert gas into a plasma vessel during at least remaining period of plasma treatment gas of a period except the time of plasma treatment. CONSTITUTION:A material 42 to be treated is placed on a placing base 30 in a plasma treatment vessel 50, and to treat it using plasma by cooling the base 30 to temperature-regulate the material 42 to be treated, inert gas is introduced into the vessel 50 during at least remaining period of plasma treatment gas of a period except the time of plasma treatment. For example, supply G of etching gas is switched to supply N of N2d gas of inert gas by a gas supply system at a time T except the time of plasma treatment in synchronization with stop of etching process E with a RF output, introduction of the etching gas into the vessel 50 is stopped, N2 gas is introduced into the vessel 50 by a N2 introducing system 80, and discharged through a discharge port 52.

Inventors

• 👤 Hiroshi Kojima
• 👤 弘 小島
• 👤 Yoshifumi Tawara
• 👤 田原　好文
• 👤 Izumi Arai
• 👤 泉 新井

Bibliographic Details