Formation of thin al-cu alloy film

Abstract

Abstract PURPOSE:To allow a thin Al-Cu alloy film to simultaneously satisfy step covering property and migration resistance by alternately forming thin films of Al and Cu by CVD with an organoaluminum compd. and hexafluoroacetylacetonatocopper as starting materials and carrying out heating to form the alloy thin film. CONSTITUTION:An organoaluminum compd. is used as starting material for Al and hexafluoroacetylacetonatocopper as starting material for Cu. When a film is formed by CVD, gases of both the starting materials are intermittently and alternately fed without mixing and thin films of Al and Cu are alternately formed. The resulting multilayered film is heated to form a thin Al-Cu alloy film by counter diffusion of Al and Cu. The thickness of the Al-Cu alloy film and the ratio between Al and Cu in the film are controlled by regulating the flow rates of the gases. Small contact holes are embedded.

Inventors

• 👤 Tsutomu Niizawa
• 👤 新澤　勉

Bibliographic Details