Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the deterioration in electrical characteristics by forming the residual polysilicon layers of first and second polysilicon layers on the sidewall of a gate electrode and using the residual polysilicon layers as protective layers on etching in the formation of the gate electrode. CONSTITUTION:An oxide film 2 is formed onto an N-type silicon substrate 1, and a polysilicon layer 3 is shaped. A tungsten silicide layer 4 is formed onto the polysilicon layer 3, and an oxide film 8 is shaped. The oxide film 8 is dry-etched while using a gate pattern as a mask, and the tungsten silicide layer 4 is dry-etched, thus forming a gate section 9. A polysilicon layer 10 is deposited, and the polysilicon layers 3, 10 are anisotropic-etched, thus shaping a polycide gate electrode 12, sidewalls of which have the residual sections 11 of the polysilicon layers 3, 10. An oxide film is deposited onto the whole surface, and sidewalls 6a are shaped through anisotropic etching. The ions of boron fluoride are implanted while employing the gate electrode 12 and the sidewalls 6a as masks, and P-type source.drain regions 7 are formed through heat treatment.

Inventors

• 👤 Yoshihiro Tokuyama
• 👤 徳山　宜宏

Bibliographic Details