Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make the gate insulating withstand voltage high and the interface level density high by forming a gate insulating film of an insulated gate type field effect transistor according to sputtering process through introducing a gas, containing at least argon and helium gases, into a vacuum vessel. CONSTITUTION:A gate insulating film 104 is formed by sputtering process. Herein, He gas is introduced in addition to Ar gas. According to one example of the film forming method, Ar gas and He gas are introduced into a vacuum vessel, and a target is formed of SiO2 to be subjected to sputtering. Damage reducing effect appears when the He gas concentration is not less than 5% and the effect appears remarkably when it is not less than 10%, and practically it is desirable to be about 10%-50%. Further, also the internal pressure during the sputtering has an important relation to the reduction of damage. Namely, when the internal pressure is decreased, the damage is decreased, too.

Inventors

• 👤 Hideaki Oka
• 👤 秀明 岡

Bibliographic Details