Semiconductor laser and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a gain coupling type semiconductor laser which oscillates stably in a simple mode by providing a refractive index conforming layer which has inhibited band width larger than an active layer and whose refractive index is higher than a clad layer and which is so arranged as to remove the periodicity of the refractive index. CONSTITUTION:For an active layer 3 and an absorbing layer 5, the refractive indexes are higher than clad layers 2 and 7, so in case that only the thickness of the absorbing layer 5 is changed, the equivalent refractive indexes vary between the place where the absorbing layer 5 is thick and the place where it is thin. Accordingly, the periodicity of the refractive index arises. To compensate for this, a refractive index conforming layer 8, whose refractive index is higher than the clad layers 2 and 7, is provided. This is an n-type of In0.72Ga0.28 As0.6P0.4 layer. If the refractive index and the thickness of the refractive index conforming layer 8 are set so that the equivalent refractive index at the position of a region A-A', where the refractive index conforming layer 8 is provided, may be equal to that at the position of region B-B', where the absorbing layer 5 exists, the periodicity of refractive index can be removed.

Inventors

• 👤 Akira Takemoto
• 👤 武本　彰
• 👤 Hitoshi Watanabe
• 👤 渡辺　斉
• 👤 Masatoshi Fujiwara
• 👤 正敏 藤原
• 👤 Shoichi Kakimoto
• 👤 柿本　昇一

Bibliographic Details