Semiconductor device

Abstract

Abstract PURPOSE:To easily control an impedance by inserting a matching circuits, whose reactance components are changed according to a voltage to be impressed to a varactor diode, to the input and output transmission lines of a high frequency signal processing circuit. CONSTITUTION:An input high frequency signal from a terminal 7 is transmitted for a prescribed electric length along lines 2 and 20. The control voltage is impressed from an external variable control power source 12 to the varactor diode 10 of the matching circuit 9a and the reactance component is set at a prescribed value. Therefore, the input signal is matched to the input impedance of a mu-wave FET 1 and efficiently inputted to this FET 1. The input signal is amplified and transmitted for the prescribed electric length along lines 40 and 4. For the matching circuit 9b, the reactance component of the varactor element 10 is set by the external variable control power source 12 and the signal is matched to the output impedance of the mu-wave FET 1. Then, the output power of the FET is efficiently taken out from a terminal 8. Thus, the mu-wave FET amplifier with a desired characteristic can be obtained by simply controlling the input and output impedances.

Inventors

• 👤 Yoichi Kawakami
• 👤 陽一 川上

Bibliographic Details