Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make a highly reliable insulating film of a specified thickness which have no increase of a leak current because of application of high field to a low-field area by a combination of nitriding and reoxidizing processes for a silicon oxide. CONSTITUTION:A silicon oxide 12 is formed in the thickness of about 60Angstrom on a silicon substrate 11. The silicon oxide 12 is obtained by exposing the substrate 11 to oxygen gas for oxidizing the surface of the substrate 11 at the substrate temperature of 850 deg.C for 15 minutes. Nextly, the substrate 11 is exposed to the nitriding atmosphere for a first heat treatment. By this, a silicon oxynitride film 13 (the surface of a silicon nitride film is nitrided) is obtained. Then, the substrate 11 is exposed to the oxidizing atmosphere for a second heat treatment. At this time, the substrate temperature is set higher than in the first heat treatment or the treatment is conducted longer than in the first heat treatment at the same substrate temperature. By this, a reoxidized silicon oxynitride film 14 of 70Angstrom or under in thickness is obtained. After that, a polycrystal silicon electrode 15 is formed according to an accumulation pattern of polycrystal silicon films by a CVD.

Inventors

• 👤 Satoru Kitagawa
• 👤 悟 北川
• 👤 Seiji Yamada
• 👤 誠司 山田
• 👤 Kikuo Yamabe
• 👤 紀久夫 山部

Bibliographic Details