Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To allow a semiconductor device to have a good contact resistance by forming Ti/TiN films to the electrode contact window of an n-type impurity diffusion layer and a contact having no barrier metal to the electrode contact widow of a p-type impurity diffusion layer. CONSTITUTION:After electrode contact windows 201, 203, 204, and 205 are formed by etching, a Ti and TiN films 10 and 11 which are the first and second coatings, respectively, are successively formed as barrier metals on the entire surface of a wafer. Then a resist pattern is formed and the source-drain electrode contact widow 202 and P well layer electrode contact window 206 of a PMOS transistor are formed by etching an SiO2 film 9 containing B and P and the Ti and TiN films 10 and 11. Accordingly, the Ti/TiN films can be formed to the contacts of an n<+> layer 7 and gate electrode 6 which has an n-type high concentration as barrier metals and a contact having no barrier metals of the Ti/TiN film can be formed on a p<+> layer 8. Therefore, effective contacts can be formed.

Inventors

• 👤 Akio Miyajima
• 👤 明夫 宮島
• 👤 Shohei Shinohara
• 👤 篠原　昭平

Bibliographic Details