Semiconductor laser device of refractive-index waveguide type

Abstract

Abstract PURPOSE:To prevent that a dislocation caused in a blocking layer is propagated to an inner-clad layer and an active layer as a light-emitting region by a method wherein a layer composed of a superlattice is formed between the inner clad layer and an outer clad layer formed as a ridge structure. CONSTITUTION:An n-clad layer 2 is grown on a substrate 1; an active layer 3 and a p-inner-clad layer 4 are laminated and grown on it in this order by an MOCVD method. A p-etching-stopper layer 11 of a superlattice is grown on the p-inner-clad layer 4. The p-inner-clad layer 4 of the superlattice is formed by laminating p-In0.5Ga0.5P in 20Angstrom and p-In0.5(Ga0.5Al0.5)0.5P in 100Angstrom five times each thus producing a laminated structure composed of total ten layers. A p-outer-clad layer 6 of p-In0.5(Ga0.5Al0.5)P is laminated on the p-etching-stopper layer 11 composed of the superlattice. Then, an SiO2 film 9 is formed on the p-outer-clad layer 6 by a sputtering operation or the like; it is etched; a stripe of the SiO2 film 9 is formed.

Inventors

• 👤 Takashi Iwamoto
• 👤 隆 岩本

Bibliographic Details