Semiconductor device

Abstract

Abstract PURPOSE:To get a semiconductor device, which has an element with small occupancy area, by using a tubular region, which surrounds a semiconductor region having three-dimensional expansion, as a channel region. CONSTITUTION:One source/drain region 2 of a vertical MOS transistor is connected to an electric wiring 6a through a contact hole 7a, and the other source/ drain region 3 is connected to an electric wiring 6b through a contact hole 7b. The electric wiring 6a is isolated electrically from a semiconductor substrate 1a, being made on an insulating film 8. The vertical MOS transistor is surrounded by an insulating film 9 thereby being isolated electrically from the adjacent element, and besides it is covered with a protective film 10. When positive voltage than the potential of an active region 1b is applied to a gate electrode 5a, charge is induced at the surface of the active region 1b opposed to the gate electrode 5a, and a channel region is made, and the four outsides become channel regions. Hereby, even if the occupancy area of the semiconductor region is small, long channel width can be gotten.

Inventors

• 👤 Motoaki Tanizawa
• 👤 元昭 谷沢

Bibliographic Details