Manufacture of compound semiconductor mixed crystal

Abstract

Abstract PURPOSE:To make it possible to bring into a high resistance state, to obtain excellent crystal, and to accomplish a highly efficient semiconductor device by a method wherein, among III-V compound semiconductor mixed crystal manufactured by a crystal growth method, a component of a group III element is set as Al, and a transition metal or oxygen, or both of them are used as a dopant. CONSTITUTION:Trimethylgallium 4 and trimethyl aluminum 5 are used as raw material in Al, and Ga which are group III element, they are carried by bubbling with high purity pure hydrogen 1, and arsine 3, which is the hydride of Ad, is supplied from a cylinder as the raw material of group V element. The control of supply of group V element material is conducted by a mass controller 8 in a highly precise manner. In order to bring AlGaAs into the state of high resistance, Cr is selected as a transition metal, bisbenzene chromium is used as the material, and titramethoxy silane 7 is used as the material for oxygen. High purity hydrogen 1 is used as a carrier, and the flow rate of which is controlled by a massflow controller 8 in a highly precise manner. The above-mentioned raw materials have been introduced into a quartz reaction tube 13, they are decomposed and reacted on the GaAs substrate 10 placed on a carbon-ceptor which is heated up by an inflared ray heating lamp 12, and a high resistance AlGaAs is stably formed on the GaAs substrate 10.

Inventors

• 👤 Kazumi Kasai
• 👤 和美 河西
• 👤 Hiromi Ito
• 👤 伊藤　弘巳
• 👤 Hitoshi Tanaka
• 👤 均 田中
• 👤 Nobuaki Tosakai
• 👤 止境　伸明

Bibliographic Details