Semiconductor integrated circuit

Abstract

Abstract PURPOSE:To enable formation of a semiconductor integrated circuit not necessitating an externally fitted capacitor for absorbing power source noise by a method wherein a capacitor for absorbing the power source noise which is formed of a first metal layer connected to a power source terminal and a second metal layer connected to a dielectric layer and a grounding terminal is provided on an insulating film of a semiconductor chip. CONSTITUTION:A capacitor composed of a first metal layer 9, a dielectric layer 10 and a second metal layer 11 is formed on a cover insulator film of a semiconductor chip, and the capacitor is covered with another cover insulator layer 12. Besides, it is connected to an external power source through a power source pad 6 connected to the first metal layer 9 and through a grounding pad 7 connected to the second metal layer 11. By providing the capacitor for absorbing power source noise as a thin-film capacitor on the insulator film 8 of the semiconductor chip, a semiconductor integrated circuit free from malfunction due to the power source noise can be obtained without lowering the density of components.

Inventors

• 👤 Yoichi Endo
• 👤 洋一 遠藤

Bibliographic Details