Semiconductor device

Abstract

Abstract PURPOSE:To form electrodes having desired wiring width without generating failure such as a short circuit between the electrodes by forming an insulator region just under a second conductor region in structure having excellent flatness. CONSTITUTION:A gate oxide film 2, a gate electrode 3 and an n-type impurity region 4 are shaped to a p-type silicon substrate 1, thus acquiring a MIS type transistor. A PSG film 5 is formed onto the surface of the transistor, and a contact opening section 6 is shaped to the film 5. A tungsten silicide electrode 7 is formed for a wiring and a PSG film 8 for insulating a section between wiring layers on the surface of the PSG film 5. An indentation 9 is shaped to the PSG film 8 just above the contact opening section 6 at that time. A spin-on glass film 10 having low viscosity is formed so as to bury the inside of the indentation 9 on the surface of the PSG film 8. A shallow indentation 11 is shaped to the spin on glass film 10 just above the contact opening 6 at that time. The contact opening is formed selectively, and an aluminum electrode 12 is shaped choicely for wirings.

Inventors

• 👤 Masayuki Yanagisawa
• 👤 柳澤　正之

Bibliographic Details