Atmospheric pressure vapor deposition device

Abstract

Abstract PURPOSE:To introduce inert gas to a middle part of a slit plate, where stagnation is produced, to prevent abnormal deposition of a reaction product by providing a passage for blowing out the inert gas between teeth of the middle part of the slit plate for distributing reaction gas. CONSTITUTION:A first reaction gas 1 and a second reaction gas 2 pass through a separated slit plate 3 so as not to be mixed with each other, and are mixed on the surface of a wafer 4 to form a vapor phase epitaxy film, and the residual reaction gas is drawn by exhaust ducts 5 provided on the opposite sides. On the other hand, inert gas 6 introduced from the middle part of the slit plate 3 is drawn by the exhaust ducts 5 on the opposite sides. In this manner, by providing a passage in the slit plate 3 for introducing the inert gas, it is eliminate that a reaction product deposits on the intermediate part slit and adheres to the wafer located on the opposite position as dust to deteriorate the yield.

Inventors

• 👤 Minoru Osaki
• 👤 大崎　実

Bibliographic Details