Manufacture of active matrix liquid crystal display

Abstract

Abstract PURPOSE:To preclude the growth of a natural oxide film and organic material contamination and to obtain an excellent ohmic contact with low resistance by growing a gate insulating film, a semiconductor Si layer, an n<+>Si layer, and source-drain metal continuously in order without exposing to air and holding the state of this film order up to a final process. CONSTITUTION:After a gate electrode 2 is formed and patterned, the gate insulating film 3, semiconductor Si layer 4, n<+>Si layer 5, and metallic layer 6 are grown continuously in order without breaking a vacuum system and these films are held in contact with the contact part of TFT in order until the TFT process ends. Consequently, the natural oxide film of Si is eliminated and organic material contamination which is caused in a photolithographic process can be eliminated. Further, the ohmic contact with low resistance can be secured at a source-drain part with good reproducibility.

Inventors

• 👤 Keizo Kobayashi
• 👤 敬三 小林

Bibliographic Details