Semiconductor device

Abstract

Abstract PURPOSE:To enhance a channel in width per element planar area in a planar direction by a method wherein pillar-shaped regions are formed on a semiconductor substrate, and an FET provided with a gate electrode is formed on the side face of the pillar-like region. CONSTITUTION:Pillar-shaped regions 31-37 protrudent higher than the primary face of a substrate 1 are formed in rows on the element region of the substrate 1. A thermally oxidized film serving as a gate insulating film 4 is formed on the surface of the element region including the surfaces of the pillar-shaped regions 31-37, for instance, through a thermal oxidation method. Then, a polysilicon layer to serve as a gate electrode 5 is deposited on the whole face through a CVD method and etched as deep as its thickness through a RIE method of anisotropic etching to be left on the side face of the pillar-shaped regions 31-37 as the gate electrode 5. At this point, the formed electrode 5 covers all the pillar-shaped regions 31-37 and functions as a single gate electrode 5 in the element region. By this setup, a channel can be enhanced in width per element planar area in the widthwise direction of a FET, so that a semiconductor device of this design can be enhanced in a current drive capacity.

Inventors

• 👤 Tomohisa Mizuno
• 👤 智久 水野

Bibliographic Details