Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To make it possible to form an active region having a uniform particle diameter by a method wherein an impurity is introduced in parts, which are used as source and drain regions, of an amorphous semiconductor film and a heat treatment for generating a solid phase crystal growth in the semiconductor film is performed. CONSTITUTION:An impurity is introduced in parts, which are used as source and drain regions 17a, of an amorphous semiconductor film 14 and a heat treatment for generating a solid phase crystal growth in the film 14 is performed. That is, the solid phase crystal growth in the regions 17a can be accelerated faster than that in an active region 17b by performing the heat treatment after the impurity is introduced in the parts, which are used as the regions 17. Accordingly, the solid phase crystal growth can be generated from the regions 17a toward the region 17b using the nuclei for the crystal growth generated in the regions 17a as seeds. Thereby, the region 17b having a uniform particle diameter is formed.

Inventors

• 👤 Kazuhiro Tajima
• 👤 田島　和浩

Bibliographic Details