Thin film transistor

Abstract

Abstract PURPOSE:To obtain a thin film transistor having stable characteristics, high uniformity, high gate breakdown strength and small defect by providing a first insulating layer made of a silicon oxide film formed by a directional beam depositing method to cover a semiconductor layer, a second insulating layer formed on the surface of the first layer, and a gate electrode formed on the second layer. CONSTITUTION:An insular semiconductor layer 6 made of a thin silicon film formed on an insulating board 1, a first insulating layer 7 made of a silicon oxide film formed by a directional depositing method to cover the layer 6, a second insulating layer 8 formed on the layer 7, and a gate electrode 9 formed on the layer 8 are provided. For example, a first insulating layer 7 made of an SiO2 film formed by an ECR-p-CVD method and a second insulting layer 8 made of a silicon nitride film formed by a plasma CVD method are sequentially laminated on the layer 6 made of a polycrystalline silicon thin film having a channel region 3, a drain region 4 and a source region 5, and a gate electrode 9 made of a chromium thin film is provided thereon.

Inventors

• 👤 Hiroshi Komatsu
• 👤 博志 小松

Bibliographic Details