Treatment method of cis structure containing transparent conductive oxide film

Abstract

Abstract PURPOSE:To recover the characteristic of a CIS structure and to prevent a transparent conductive oxide film from becoming foggy by a method wherein, after a transparent electrode film has been formed, it is heat-treated at 300 to 500 deg.C in H2 or in an atmosphere containing H2 in an inert gas. CONSTITUTION:A thermal oxide film is formed on an Si substrate, and an ITO electrode is vapor-deposited to obtain a CIS structure. In succession, this assembly is heat-treated at 300 to 500 deg.C in H2. As a result, a defect in the oxide film and a defect existing at the interface between the oxide film and the Si substrate under it is buried by using the H2; unbounded Si is reduced. That is to say, since a defect produced at the formation operation of an ITO film and an interface level are reduced, the characteristic of the CIS structure is enhanced. In addition, it is possible to adjust and control a flat-band voltage decided by the difference between a fixed electric charge in an insulator and a work function of a conductor. The fog of an ITO is reduced largely.

Inventors

• 👤 Hidenao Takato
• 👤 秀尚 高遠
• 👤 Kenichi Ishii
• 👤 賢一 石井
• 👤 Yutaka Hayashi
• 👤 豊 林

Bibliographic Details