Light emitting type semiconductor laser plane

Abstract

Abstract PURPOSE:To make it possible to form both ohmic electrodes on the surface of wafer and use a substrate with non-conductivity by providing a first layer which halts etching and a second layer which forms ohmic electrodes between a substrate and a semiconductor multilayer film. CONSTITUTION:A first layer 4 which halts etching and a second layer 4 which forms ohmic electrodes are provided between a substrate 1 and a semiconductor multilayer film 5. A growth layer is removed by etching up to the first layer 1 which halts etching. The first layer 4 thus exposed is further removed by etching until the second layer 3 which forms ohmic electrodes is exposed. On the exposed second layer 3 are formed ohmic electrodes 14. Therefore, the ohmic electrodes 13, 14 can be formed on the surface of wafer. At the same time, the substrate 1 can be made of a material having non-conductivity.

Inventors

• 👤 Kenichi Iga
• 👤 伊賀　健一
• 👤 Akira Ibaraki
• 👤 茨木　晃
• 👤 Kotaro Furusawa
• 👤 浩太郎 古沢
• 👤 Kenji Kawashima
• 👤 川島　健児
• 👤 Toru Ishikawa
• 👤 徹 石川

Bibliographic Details