Plane light emitting type semiconductor laser

Abstract

Abstract PURPOSE:To obtain laser light from the surface of wafer and improve heat discharge characteristics by fusing a heat sink with the surface of an exposed epitaxial layer where a substrate whose part is equivalent to an active layer is removed. CONSTITUTION:An epitaxial layer comprising a semiconductor multilayer film 4, and active layer 6 is stocked on a substrate 1, In a plane light emitting laser which uses the semiconductor multilayer film 4 as a refracting mirror, a heat sink 15 is fused with the surface of an epitaxial layer where a substrate is exposed in a part equivalent to the active layer 6 and exposed outside. This construction makes it possible to obtain sufficient heat discharge characteristics since the distance between the active layer 6 and the heat sink 15 is short, thereby enabling continuous oscillation at room temperature and moreover obtaining laser light from the surface of wafer.

Inventors

• 👤 Kenichi Iga
• 👤 伊賀　健一
• 👤 Kotaro Furusawa
• 👤 浩太郎 古沢
• 👤 Akira Ibaraki
• 👤 茨木　晃
• 👤 Toru Ishikawa
• 👤 徹 石川

Bibliographic Details