Improvement of silicon single-crystal film

Abstract

Abstract PURPOSE:To reduce a leak current due to an interfacial level by conducting a heat treatment in a non-oxidizing atmosphere and at a specific temperature after selectively causing silicon to grow on the silicon surface and further by conducting a heat treatment in an oxidizing atmosphere. CONSTITUTION:After silicon dioxide film 2 is film 2 is formed on a silicon substrate 1 and then a groove 3 is formed to partially expose the surface of the silicon substrate 1, SiH2Cl2 and HCl are used as a material gas so that the groove 3 is selectively buried in single crystal silicon 4. Then, when Si/SiO2 interface is heat-treated at the temperature of 1000 deg.C of more, a volatile silicon oxide is generated and the silicon dioxide film 2 in the vicinity of an interface between silicon and silicon dioxide is removed. Further, when a thermal oxidation is conducted in a dry oxidation atmosphere and gaps are buried in thermal oxidation film, the Si/SiO2 interface formed by the selective growth of silicon can selectively be replaced with thermal oxidation Si/SiO2 interface 5. Thus, it is possible to reduce a leak current due to an interfacial level.

Inventors

• 👤 Hiroshi Kitajima
• 👤 洋 北島
• 👤 Hiroki Fujimoto
• 👤 裕希 藤本

Bibliographic Details