Magnetic sensor

Abstract

Abstract PURPOSE:To obtain a sensor which can measure a magnetic field in a fine area and of which applicability is large by laminating a lean magnetic semicondudtor and a semiconductor alternately and making one of them a quantum well layer and the other a quantum barrier layer. CONSTITUTION:On a substrate 1 formed with an insulating material of which an elasped change is small such as glass, a multilayer film 2 that a lean magnetic semiconductor layer 2a and a semiconductor layer 2b are laminated alternately is formed. The lean magnetic semiconductor layer 2a becomes a quantum barrier and the semiconductor layer 2b becomes a quantum well. Then, when voltage is impressed on a pair of electrodes 3a and 3b, extensive Zeeman split that the energy level of the lean magnetic semiconductor 2a is split into an upward spin level and a downward spin level by the existence of a magnetic field is generated. Since the downward level after the split changes corresponding to the intensity of the magnetic field, by making the energy order of the respective quantum well layers different repectively, the value of an electric current flowing in the semiconductor layer 2b changes. Accordingly, by detecting the change of a current value, the intensity of the magnetic filed can be obtained.

Inventors

• 👤 Hisaya Baba
• 👤 馬場　久也

Bibliographic Details