Formation process and device of soi substrate

Abstract

Abstract PURPOSE:To form a silicon single crystal in high quality on a silicon oxide film in precision thickness by a method wherein an electron gun type evaporator is provided while a substrate is injected with oxygen molecular beams from a plasma ion source under irradiation with silicon molecular beams to be heated later. CONSTITUTION:An MSE device provided with an electron gun type Si evaporator 12, ECR plasma ion sources 13, 14, 15 is used. An n type Si substrate 3 used as a specimen wafer is RCA cleaned up and then placed in a formation chamber 16; an alpha-Si deposited in 10Angstrom thick is cleaned up at 800 deg.C for one minute; the substrate temperature is lowered at 700 deg.C to form an SOI substrate to be irradiated with oxygen ion 6 in 1muA/cm<2> from an ion source and simultaneously irradiated with Si molecular beams 5 in 1.0Angstrom /S from an evaporator 12. After the film thickness of SiO2 reaches the specific value, the oxygen ion irradiation is stopped; Si is MBE deposited to perform the heat treatment in vacuum at 800 deg.C for 30 minutes so that an SOI substrate equal to that formed by using a thermal oxide film may be formed.

Inventors

• 👤 Toru Tatsumi
• 👤 徹 辰巳

Bibliographic Details