Solid-state image sensing device

Abstract

Abstract PURPOSE:To obtain a solid-state image sensing device of high reliability wherein the generation of smear is restrained, by preventing a light from leaking into a semiconductor substrate part under the vicinity of a transferring part by using a shielding film. CONSTITUTION:A recessed part 23 is formed by caving the surface of a P-type well region 22 where an N-type layer 25 corresponding with a light receiving window 32 is formed. The surface level of said part 23 is positioned at a part lower than the surface of the P-type well region 22. In this manner, the end portion of a light shielding film 31 positioned on the periphery of the light receiving window 32 is set at the same level as the surface of an N-type buried layer 26 constituting a CCD transferring part, or positioned at a part lower than the surface of the layer 26. As the result, when a lot of light enters from the light receiving window 32, the light entering the well region 22 under the vicinity of the buried layer 26 turning to a transferring part is blocked by the shielding film 31, and the light can be prevented from leaking into the region 22 part. Hence an image signal led out from the rear end of the transferring part becomes large, and so-called smear generation is restrained.

Inventors

• 👤 Hirobumi Kishida
• 👤 博文 岸田

Bibliographic Details