Semiconductor light-emitting element

Abstract

Abstract PURPOSE:To reduce the absorption of radiant light in a substrate even in case the title element is luminesced at a green region and to contrive the improvement of the luminance of the element by a method wherein a light-reflection layer consisting of alternately laminated films, whose compositions are different from one another, is formed between a luminous layer and the substrate. CONSTITUTION:In a semiconductor light-emitting element, which has a luminous layer consisting of P-N junction on a semiconductor substrate and in which a semiconductor forming the luminous layer is formed of InxGayAl1-x-yP (0<=x<=1, 0<=y<=1), a light-reflection layer consisting of alternately laminated films, whose compositions are different from one another, is formed between the luminous layer and the substrate. For example, a P-type GaAs buffer layer 12 and a P-type InGaP intermediate band gap layer 13 are grown and formed on a P-type GaAs substrate 11 and moreover, a light-reflection layer 14 consisting of a multiple structure of a P-type InAlP and a P-type InGaAlP is grown and formed on this layer 13. The layer 14 is formed at a laminate period in a degree of 1/2 of luminous wavelength for making high a reflectivity.

Inventors

• 👤 Toshihide Izumitani
• 👤 敏英 泉谷
• 👤 Yasuo Oba
• 👤 康夫 大場
• 👤 Gokou Hatano
• 👤 波多野　吾紅

Bibliographic Details