Semiconductor laser device and manufacture thereof

Abstract

Abstract PURPOSE:To improve reliability and manufacture yield and reduce the cost by eliminating oxidation of a regrown interface to improve crystallizability by inserting a GaAs melt back layer between a block layer and a second upper cladding layer. CONSTITUTION:In a liquid phase epitaxy device, a GaAs melt back layer 12 and a GaAs etching stopper layer 10 existent on the bottom of a groove 6 for a current path are removed by melt back using a GaAs or Ga-Al-As melt. Successively, a P type AlzGa1-zAs cap layer 7 and a P type GaAs contact layer 8 are formed by making use of liquid phase epitaxial growth. With forward voltage applied across electrodes 9a, 9b, stable lasing is established in a transverse mode. The cap layer 7 can be grown without exposing an upper cladding layer 4 to the atmosphere with the aid of the GaAs etching stopper layer 10 and an n type AlpGa1-pAs current blocking layer 11, so that crystallizability along a regrown interface is improved to yield a highly reliable semiconductor laser device.

Inventors

• 👤 Masato Okada
• 👤 真人 岡田

Bibliographic Details