Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To enable an element to be micronized and highly integrated by a method wherein a wiring layer is made not only to extend from a low resistance region to the surface of a base along an element isolating region but also to be covered with an insulating layer to be isolated from a semiconductor region. CONSTITUTION:A silicon oxide film 2 is formed on a silicon substrate 1 so as to constitute an insulating base, and a semiconductor region 4 elementally isolated by an element isolating region 3 is provided thereon. A buried layer 8 of a low resistance region is formed of an N<+> type impurity diffusion layer, and a polysilicon layer 7 of a wiring layer is provided under the buried layer 8 but above the silicon oxide film 2 or between them. A silicon oxide film 6 is formed on the side of a semiconductor region 4 as an insulating film so as to make the semiconductor region 4 surrounded with the side wall of a groove 5. The buried l layer is connected with a collector wiring electrode 15c through the intermediary of the polysilicon layer 7. By a constitution mentioned above, a region, used for leading out a collector, can be made sufficiently small, so that an element can be micronized.

Inventors

• 👤 Akio Kashiwanuma
• 👤 栢沼　昭夫

Bibliographic Details