Matrix type liquid crystal display panel

Abstract

Abstract PURPOSE:To improve the on-off characteristics of a thin film transistor (TFT) and the picture quality by using a microcrystal n-type semiconductor film whose conductivity is specified as a contact layer between an amorphous silicon film and source-drain electrodes. CONSTITUTION:The contact layer 7 between the amorphous silicon film 5 and source-drain electrodes 8 and 8' of the channel part of the TFT is formed of the microcrystal semiconductor film 7 whose conductivity is >=10 deg.S/cm. Consequently, the activating energy of the contact layer 7 is reduced and the conductivity is increased to reduce the serial resistance component in the contact part greatly. Consequently, the on-off characteristics of the TFT and the picture quality of the panel are improved.

Inventors

• 👤 Toshihiko Hirobe
• 👤 広部　俊彦
• 👤 Yoshitaka Hibino
• 👤 吉高 日比野
• 👤 Hajime Shoji
• 👤 庄司　元

Bibliographic Details