Semiconductor device

Abstract

Abstract PURPOSE:To increase the distribution of electron at an equi-energy surface where a conduction effect is large, to thin a silicon film, and decrease surface field effect, by making a specified tensile strain exist in a semiconductor region. CONSTITUTION:After a thick insulating film 2 is formed on a silicon (100) substrate 1, the insulating layer 2 is eliminated and a part of the (100) substrate 1 surface is exposed; thereon, a polycrystalline silicon layer 3 is deposited in a thickness equal to or less than, e.g., 1000Angstrom ; the polycrystalline silicon layer is turned into a single crystal silicon layer 5 by EB annealing or the like while the exposed silicon (100) substrate 1 is used as crystal species; in the single crystal silicon layer 5, tensile strain of 8.1X10<-4>-7.3X10<-3> is made to exist by, e.g., the following EB annealing conditions; electron beam current is 65-90mA, scanning speed is 10cm/sec or more, and the substrate temperature is 600 deg.C or less. After devices like storage elements are formed in the single crystal silicon layer 5, a thin SOI film is formed on the upper layer. A thickness range of 125-1050Angstrom is most suitable for the SOI film.

Inventors

• 👤 Takako Kashio
• 👤 樫尾　多佳子

Bibliographic Details