Semiconductor device

Abstract

Abstract PURPOSE:To make it possible to apply electric potential simultaneously to a source and a semiconductor substrate, and increase the freedom of wiring passing the upper part, by arranging a conductor layer composed of a first conductor part and a second conductor part, the first conductor part being formed in a source region separated from a gate electrode by a specified distance, so as to be deeper than the depth of a junction in the source region, and the second conductor part being connected with one power supply terminal, from the first conductor part and through the semiconductor substrate. CONSTITUTION:A trench is formed in a semiconductor substrate 1 so as to be in contact with a source region 5; a metal layer 11 is formed by burying metal like tungsten in the trench; this metal layer turns to a GND wiring to apply ground potential to the semiconductor substrate 1 and the source region 5; an insulating film 7 is stuck, and an aperture is formed by photolithography method; wirings 9, 12 are formed. Since the metal layer 11 can be formed in the source region 5, a special region to supply electric potential to the semiconductor substrate 1 is made unnecessary. Further since the GND wiring exsists in the semiconductor substrate 1, another wiring 12 can be freely arranged on the upper part. The interval (x) between the metal layer 11 and a gate electrode 4 is determined by breakdown strength of the insulating film 7 and working precision.

Inventors

• 👤 Shinken Okawa
• 👤 大川　真賢

Bibliographic Details