Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a thin film of high melting-point metal having high uniformity and reproducibility on a surface having difference in level either by depositing the high melting- point metal thin film by the CVD after treating an Al thin film which has been deposited on a substrate the surface of which has difference in level by the sputtering within an atmosphere of hydrogen and halogen or anhydrous fluoride, or by depositing the high melting-point metal thin film by the CVD on the untreated Al thin film so as to provide a laminate of the first metallic thin film and the high melting-point metal thin film. CONSTITUTION:An underlying insulating film 3 is deposited on the surface of an Si wafer 1, and an Al alloy thin film 5 as first metallic thin film is deposited thereon. The structure is then treated within an atmosphere containing active hydrogen gas and halogen or anhydrous fluorate gas so that a surface oxide film 6 on the Al alloy film is removed. Subsequently, the structure is subjected to the CVD process within atmosphere containing tungsten hexafluoride and hydrogen without exposing it to the atmospheric air so that a W thin film 9 is deposited on the surface of the Al alloy film. Alternatively, an Al alloy thin film 5 as first metallic thin film may be deposited by the sputtering and subsequently a W thin film is deposited by the CVD. Finally, the layered metallic film consisting of the Al alloy thin film 5 and the W thin film is patterned into interconnections.

Inventors

• 👤 Hiroshi Yamamoto
• 👤 浩 山本
• 👤 Jun Onoe
• 👤 尾上　順
• 👤 Takao Kakiuchi
• 👤 垣内　孝夫
• 👤 Tsutomu Fujita
• 👤 勉 藤田

Bibliographic Details