Manufacture of field effect transistor

Abstract

Abstract PURPOSE:To prevent damage to a gate insulation film when performing ion implantation of impurities from oblique direction by forming in a shape where the upper edge part of the drain side of a gate electrode overhangs. CONSTITUTION:A silicon dioxide film and a polycrystal silicon film are formed on a semiconductor substrate 1 and resist is applied and etching is performed to allow a gate electrode in reverse taper shape and a gate insulation film 21 to be formed. By implanting first impurity ions (P<+>)61 from diagonal direction, a first source area 41 and a first drain area 51 are formed. Furthermore, by allowing second impurity ions (As<+>) to be subject to incident implantation from the tangential direction of the surface of a substrate, a second source area 42 and a second drain area 52 are formed. Since the ion enters at an angle closer to the slope of the side surface of the gate electrode 22, damage of the gate insulation film 21 is minimized and reduction in withstand voltage can be prevented.

Inventors

• 👤 Naoe Ishizaka
• 👤 石坂　直恵
• 👤 Heihachi Ochika
• 👤 尾近　平八

Bibliographic Details