Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve step coverage by forming a conductive layer combining the growth of a polysilicon layer and diffusion of a phosphor and forming a conductive layer with a smooth surface. CONSTITUTION:After allowing a first polysilicon layer 2 to grow on a ground oxide film 1, gas is switched to an O2 gas and an oxide film 3 is formed. A second polysilicon layer 4 is allowed to grow on the oxide film 3. Phosphor is diffused from that surface. Phosphor concentration is high and low on silicon layers 4 and 2, respectively. After forming mask 5 on the silicon layer 4, the silicon layers 2 and 4 are subject to wet etching. Thus, a conductive layer consisting of the silicon layers 2 and 4 becomes smooth. It improves step coverage of film growth.

Inventors

• 👤 Yasuki Nakao
• 👤 中尾　泰樹

Bibliographic Details