Manufacture of semiconductor device

Abstract

Abstract PURPOSE: To obtain a metal silicide top layer of Si regions by depositing Co or Ni as a metal on the surface and heating a semiconductor body up to a temp. for forming Co disilicide or Ni disilicide to avoid overgrowth of the metal silicide. CONSTITUTION: A metal is deposited on a structure 2 and a semiconductor body 1 is heated up to a temp. enough to react the metal with Si regions 3, 4, 5, 6 during this depositing to form a metal silicide layer 10 on the regions 3-6. Thus the Si regions 3, 4, 5 can be made to satisfactorily form contacts. The region 6 also provides a low electric resistance. This avoids overgrowing the metal silicide and a metal silicide top layer of the Si regions is obtd.

Inventors

• 👤 Ivo J M M Raaijmakers
• 👤 イボ・ヨハネス・メチルダス・マリア・ラーエイマケルス

Bibliographic Details