Semiconductor manufacturing apparatus and manufacture of semiconductor device

Abstract

Abstract PURPOSE:To increase the etching speed of an insulating film on a metal layer and to flatten it by wet etching by providing a section irradiated with an infrared rays and a section for controlling an etching tank and temperature, and wet etching it while irradiating it with the infrared rays. CONSTITUTION:An infrared ray generator 1 generates a characteristic absorption wavelength of an insulating film to be etched. Etchant 10 in an etching tank 3 is controlled at its temperature by a constant-temperature oven 4, and returned to the tank 3 uniformly through a porous plate 5 to be circulated. That is, since the reflection coefficient of the applied infrared rays on a metal is near substantially '1', the infrared rays reflected on the metal of the part with the metal as a base is again absorbed by the insulating film. Thus, molecular vibrations of the base with the metal and the base without metal are different to cause temperature difference. Thus, etching speeds are differentiated, and flattened.

Inventors

• 👤 Yoshitaka Dansui
• 👤 慶孝 暖水

Bibliographic Details