Manufacture of light-emitting element

Abstract

Abstract PURPOSE:To realize a monochromatic color and high brightness of a luminous color by a method wherein an active layer is irradiated with an electron beam under conditions at an acceleration voltage of 0.1 to 9kV and at a specimen current of 0.2muA to 1mA. CONSTITUTION:A layer composed of single-crystal AlXGa1-XN (including X=0) doped with an impurity is irradiated with an electron beam under conditions at an acceleration voltage of 0.1 to 9kV and at a specimen current of 0.2muA to 1mA. During this process, a remarkable difference is detected in a photoluminescence intensity characteristics before and after an image of an AlXGa1-XN (including X=0) semiconductor doped with the impurity is picked up. That is to say, it is possible to enhance luminous brightness of a blue color in a luminous characteristic and to lower the luminous brightness of a spectrum other than the blue color; the luminous brightness which is sensitive to a visible- ray region can be enhanced by irradiation with the electron beam. Thereby, it is possible to realize a high-brightness light-emitting element and its blue monochromatic color.

Inventors

• 👤 Katsuhide Manabe
• 👤 勝英 真部
• 👤 Hisayoshi Kato
• 👤 久喜 加藤
• 👤 Isamu Akasaki
• 👤 勇 赤崎
• 👤 Hiroshi Amano
• 👤 浩 天野

Bibliographic Details