Semiconductor device

Abstract

Abstract PURPOSE:To obtain a device wherein characteristics of a thin film transistor is excellent and the generation of failures is little in a manufacturing process, by forming a gate insulating film of the thin film transistor, of a two-layered silicon nitride whose film properties are different with each other. CONSTITUTION:A chromium gate electrode 12 is formed on a glass substrate 11. Silicon nitride gate insulating films 13a, 13b, an amorphous silicon semiconductor layer 14, and amorphous silicon semiconductor layers 15a, 15b containing phosphorus are continuously formed in order. In this case, the composition of mixed gas of silane, ammonia, nitrogen and hydrogen, which is used for forming the films 13a, 13b, is made different, thereby reducing the etching speed of the film 13b. By using mixed solution of hydrofluoric acid and nitric acid, the layers 14, 15a, 15b are formed in an island type, and source drain electrodes 16a, 16b are formed. Finally, the layers 15a, 15b left on the layer 14 of a thin film transistor(TFT) channel part are eliminated by using mixed solution of hydrofluoric acid and nitric acid. Since the film 13a is etched very little, a TFT having no failures such as corrosion, disconnection, and short-circuiting of an electrode 12 can be obtained.

Inventors

• 👤 Ikunori Kobayashi
• 👤 郁典 小林
• 👤 Sadakichi Hotta
• 👤 定吉 堀田

Bibliographic Details