Semiconductor substrate with superconductor layer

Abstract

Abstract PURPOSE:To bring a wiring for an IC to a superconductive state, and to reduce the loss of currents while enabling operation at high speed by forming a composite oxide superconductive layer shaped onto an oxide substrate and an Si single crystal layer formed onto the superconductive layer. CONSTITUTION:A semiconductor substrate is formed of a composite oxide superconductive layer shaped onto an oxide substrate and an Si single crystal layer formed onto the superconductive layer. An integrated circuit using a composite oxide group superconductive material as a wiring material is shaped by machining the semiconductor substrate. An integrated circuit substrate for forming a novel superconducting element such as 21 semiconductor device, in which a Josephson junction is shaped to a composite oxide superconductor section, a superconducting transistor, in which the semiconductor substrate and the superconductor are combined, and a hot electron transistor is acquired. Accordingly, wirings for an IC are brought to a superconductive state, and the loss of currents can be reduced while high-frequency transmission or high speed operation can be realized.

Inventors

• 👤 Naoharu Fujimori
• 👤 直治 藤森
• 👤 Keizo Harada
• 👤 敬三 原田
• 👤 Shuji Yatsu
• 👤 矢津　修示
• 👤 Tetsuji Jodai
• 👤 哲司 上代
• 👤 Hideo Itozaki
• 👤 糸崎　秀夫

Bibliographic Details