Semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device wherein gate capacitance is large, while suppressing the parasitic capacitance between a gate and a source.drain, by lowering the permittivity of a gate insulating film between the gate and the source and drain than that of the gate insulating film in a channel region. CONSTITUTION:This consists of source.drain regions 2, 3, being formed at a specified interval near the main surface of a semiconductor substrate 1, a gate insulating film 4, being formed on a channel region, a gate insulating film 6, being formed on the source.drain regions 2, 3 and consisting of material whose dielectric constant is lower than that of the gate insulating film 4 on the channel region, and a gate electrode 5, being formed on said gate insulating films 4 and 6. For example, the gate insulating film 4 formed on the channel region consists of an Si3N4 film, and the gate insulating film 6 formed on the source.drain regions 2, 3 consists of an SiO2 film. Hereby, a semiconductor device can be obtained, in which the parasitic capacitance between the source and the drain is small as compared with a semiconductor device which has the same gate capacitance as in conventional ones.

Inventors

• 👤 Masayoshi Shirahata
• 👤 正芳 白畑
• 👤 Kyohiko Kotani
• 👤 小谷　教彦
• 👤 Takeshi Yamano
• 👤 剛 山野

Bibliographic Details